參數(shù)資料
型號(hào): FDS8928A
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: Dual N & P-Channel Enhancement Mode Field Effect Transistor
中文描述: 5.5 A, 30 V, 0.03 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝: SOIC-8
文件頁(yè)數(shù): 3/12頁(yè)
文件大?。?/td> 285K
代理商: FDS8928A
Electrical Characteristics
(continued)
SWITCHING CHARACTERISTICS
(Note 2)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
t
D(on)
Turn - On Delay Time
V
DS
= 6 V, I
D
= 1 A
V
GS
= 4.5 V , R
GEN
= 6
N-Ch
6
12
ns
P-Ch
8
16
t
r
Turn - On Rise Time
N-Ch
19
31
ns
P-Ch
23
37
t
D(off)
Turn - Off Delay Time
V
DS
= -10 V, I
D
= -1 A
V
GS
= -4.5 V , R
GEN
= 6
N-Ch
42
67
ns
P-Ch
260
360
t
f
Turn - Off Fall Time
N-Ch
13
24
ns
P-Ch
90
125
Q
g
Total Gate Charge
V
DS
= 10 V, I
D
= 5.5 A,
V
GS
= 4.5 V
N-Ch
19.8
28
nC
P-Ch
20
28
Q
gs
Gate-Source Charge
N-Ch
2
nC
V
DS
= -5 V, I
D
= -4 A,
V
GS
= -5 V
P-Ch
2.8
Q
gd
Gate-Drain Charge
N-Ch
6.3
nC
P-Ch
3.2
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
N-Ch
1.3
A
P-Ch
-1.3
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 1.3 A
(Note 2)
V
GS
= 0 V, I
S
= -1.3 A
(Note 2)
N-Ch
0.68
1.2
V
P-Ch
-0.7
-1.2
V
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%..
FDS8928A Rev. B
c. 135
pad of 2oz copper.
O
C/W on a 0.003 in
2
b. 125
pad of 2oz copper.
O
C/W on a 0.02 in
2
a. 78
O
C/W on a 0.5 in
pad of 2oz copper.
2
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FDS8935 功能描述:MOSFET -80V Dual P-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS8936 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor
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