參數(shù)資料
型號(hào): FDS8928A
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi): JFETs
英文描述: Dual N & P-Channel Enhancement Mode Field Effect Transistor
中文描述: 5.5 A, 30 V, 0.03 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝: SOIC-8
文件頁(yè)數(shù): 11/12頁(yè)
文件大?。?/td> 285K
代理商: FDS8928A
SOIC-8 (FS PKG Code S1)
1 : 1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0774
SO-8 Tape and Reel Data and Package Dimensions, continued
September 1998, Rev. A
9
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PDF描述
FDS8934 Dual P-Channel Enhancement Mode Field Effect Transistor
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FDS8936A Dual N-Channel Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS8934 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:Dual P-Channel Enhancement Mode Field Effect Transistor
FDS8934A 功能描述:MOSFET SO-8 DUAL P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS8935 功能描述:MOSFET -80V Dual P-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS8936 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor
FDS8936A 功能描述:MOSFET SO-8 DUAL N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube