參數(shù)資料
型號(hào): FDS8880
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench MOSFET
中文描述: 11.6 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: SO-8
文件頁(yè)數(shù): 7/12頁(yè)
文件大?。?/td> 259K
代理商: FDS8880
F
FDS8880 Rev. A1
www.fairchildsemi.com
7
Test Circuits and Waveforms
Figure 14. Unclamped Energy Test Circuit
Figure 15. Unclamped Energy Waveforms
Figure 16. Gate Charge Test Circuit
Figure 17. Gate Charge Waveforms
Figure 18. Switching Time Test Circuit
Figure 19. Switching Time Waveforms
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
V
GS
+
-
V
DS
V
DD
DUT
I
g(REF)
R
L
V
DD
Q
g(TH)
Q
gs
V
GS
= 1V
0
Q
gs2
Q
g(TOT)
V
GS
= 10V
V
DS
V
GS
I
g(REF)
0
Q
gd
Q
g(5)
V
GS
= 5V
V
GS
R
L
R
GS
DUT
+
-
V
DD
V
DS
V
GS
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS8880 制造商:Fairchild Semiconductor Corporation 功能描述:; Transistor Type:MOSFET; Leaded Process
FDS8880_07 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET
FDS8880_F123 功能描述:MOSFET 30V N-CHAN 11.6A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS8882 功能描述:MOSFET 30V 9A N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS8884 功能描述:MOSFET 30V N-Channel PwrTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube