參數(shù)資料
型號(hào): FDS8896
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench?? MOSFET
中文描述: 15 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: SO-8
文件頁數(shù): 1/12頁
文件大小: 260K
代理商: FDS8896
April 2005
F
M
2004 Fairchild Semiconductor Corporation
FDS8896 Rev. A1
www.fairchildsemi.com
1
FDS8896
N-Channel PowerTrench
MOSFET
30V, 15A, 6.0m
Features
r
DS(ON)
= 6.0m
, V
GS
= 10V, I
D
= 15A
r
DS(ON)
= 7.3m
, V
GS
= 4.5V, I
D
= 14A
High performance trench technology for extremely low
r
DS(ON)
Low gate charge
High power and current handling capability
Applications
DC/DC converters
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(ON)
and fast switching speed.
SO-8
Branding Dash
1
5
2
3
4
4
3
2
1
5
6
7
8
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS8896_07 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET
FDS8896_F123 功能描述:MOSFET 30V N-CHAN 15A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS89141 功能描述:MOSFET 100V Dual N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS89161 功能描述:MOSFET 100V Dual N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS89161LZ 功能描述:MOSFET PT5 100V Logic Level with Zener RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube