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參數(shù)資料
| 型號： | FDS8926A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 5.5 A, 30 V, 0.03 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SOIC-8 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 201K |
| 代理商： | FDS8926A |
February 1998
FDS8926A
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description Features
Absolute Maximum Ratings
T
A
= 25
o
C unless other wise noted
Symbol
Parameter
FDS8926A
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source Voltage
±8
V
I
D
Drain Current - Continuous
(Note 1a)
5.5
A
- Pulsed
20
P
D
Power Dissipation for Dual Operation
2
W
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1
(Note 1c)
0.9
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
FDS8926A Rev.B
5.5 A, 30 V. R
DS(ON)
= 0.030
@ V
GS
= 4.5 V
R
DS(ON)
= 0.038
@ V
GS
= 2.5 V.
High density cell design for extremely low R
DS(ON)
.
Combines low gate threshold (fully enhanced at 2.5V) with
high breakdown voltage of 30 V.
High power and current handling capability in a widely
used surface mount package.
Dual MOSFET in surface mount package.
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
SO-8 N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to provide superior switching
performance and minimize on-state resistance. These devices
are particularly suited for low voltage applications such as disk
drive motor control, battery powered circuits where fast
switching, low in-line power loss, and resistance to transients
are needed.
S1
D1
S2
G1
SO-8
D2
FDS
8926A
D2
D1
G2
pin
1
1
5
7
8
2
3
4
6
1998 Fairchild Semiconductor Corporation
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| FDS8928A | Dual N & P-Channel Enhancement Mode Field Effect Transistor |
| FDS8934 | Dual P-Channel Enhancement Mode Field Effect Transistor |
| FDS8934A | Dual P-Channel Enhancement Mode Field Effect Transistor |
| FDS8936S | Dual N-Channel Enhancement Mode Field Effect Transistor |
| FDS8936 | Dual N-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS8928A | 功能描述:MOSFET SO-8 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS8934 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual P-Channel Enhancement Mode Field Effect Transistor |
| FDS8934A | 功能描述:MOSFET SO-8 DUAL P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS8935 | 功能描述:MOSFET -80V Dual P-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS8936 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor |
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