參數(shù)資料
型號: FDS8333C
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 30V N & P-Channel PowerTrench MOSFETs
中文描述: 4.1 A, 30 V, 0.08 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝: SO-8
文件頁數(shù): 5/8頁
文件大?。?/td> 134K
代理商: FDS8333C
FDS8333C Rev C (W)
Typical Characteristics: N-Channel
(continued)
0
2
4
6
8
10
0
1
2
3
4
5
Q
g
, GATE CHARGE (nC)
V
G
,
I
D
= 4.1A
V
DS
= 5V
15V
10V
0
100
200
300
400
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DC
10s
1s
100ms
100
μ
s
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 135
o
C/W
T
A
= 25
o
C
10ms
1ms
0
0.001
10
20
30
40
50
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P
SINGLE PULSE
R
θ
JA
= 135°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
F
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相關代理商/技術參數(shù)
參數(shù)描述
FDS8333C 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDS8333C_Q 功能描述:MOSFET N & PCh PowerTrench 3V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS8433 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Single P-Channel 2.5V Specified MOSFET
FDS8433A 功能描述:MOSFET SO-8 SGL P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS8433A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SO-8