參數(shù)資料
型號： FDS8670
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 30V N-Channel PowerTrench MOSFET
中文描述： 21 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, SOP-8
文件頁數(shù)： 1/5頁
文件大小： 118K
代理商： FDS8670
September 2005
FDS8670
30V N
-
Channel PowerTrench
MOSFET
2005 Fairchild Semiconductor Corporation
FDS8670 Rev C (W)
General Description
This device has been designed specifically to improve
the efficiency of DC-DC converters. Using new
techniques in MOSFET construction, the various
components of gate charge and capacitance have been
optimized to reduce switching losses. Low gate
resistance and very low Miller charge enable excellent
performance with both adaptive and fixed dead time
gate drive circuits. Very low Rds(on) has been
maintained to provide an extremely versatile device.
Applications
High Efficiency DC-DC Converters:
Notebook Vcore Power Supply
Telecom Brick Synchronous Rectifier
Multi purpose Point Of Load
Features
21 A, 30 V
High performance trench technology for extremely low
R
DS(ON)
and gate charge
Minimal Qgd (5.5 nC typical)
100% R
G
tested (0.9
typical)
RoHS Compliant
Max R
DS(ON)
= 3.7 m
@ V
GS
= 10 V
Max R
DS(ON)
= 5.0 m
@ V
GS
= 4.5 V
S
D
S
S
SO-8
D
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
Drain Current – Continuous
I
D
– Pulsed
Power Dissipation
Ratings
30
±
16
21
105
2.5
1.2
1
–55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
(Note 1b)
P
D
(Note 1c)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
50
25
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
FDS8670
FDS8670
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
相關(guān)PDF資料
PDF描述
FDS8870 N-Channel PowerTrench MOSFET
FDS8870_NL N-Channel PowerTrench MOSFET
FDS8874 N-Channel PowerTrench MOSFET
FDS8876 N-Channel PowerTrench MOSFET
FDS8876_NL N-Channel PowerTrench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS8670_06 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench MOSFET
FDS8670_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench MOSFET
FDS8672S 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS8690 功能描述:MOSFET 30V 14A 7.6 OHM NCH POWER RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS8812NZ 功能描述:MOSFET 30V N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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