參數(shù)資料
型號: FDS8333C
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 30V N & P-Channel PowerTrench MOSFETs
中文描述: 4.1 A, 30 V, 0.08 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝: SO-8
文件頁數(shù): 3/8頁
文件大?。?/td> 134K
代理商: FDS8333C
FDS8333C Rev C (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
V
SD
Voltage
t
rr
Time
Q
rr
Charge
Q1
Q2
Q1
Q2
Q1
Q2
V
GS
= 0 V, I
S
= 1.3 A
V
GS
= 0 V, I
S
= –1.3 A
I
F
= 4.1 A, d
iF
/d
t
= 100 A/μs
I
F
= –3.4 A, d
iF
/d
t
= 100 A/μs
I
F
= 4.1 A, d
iF
/d
t
= 100 A/μs
I
F
= –3.4 A, d
iF
/d
t
= 100 A/μs
(Note 2)
0.8
0.8
16.3
14.5
26.7
21.1
1.2
–1.2
Drain–Source Diode Forward
(Note 2)
V
Diode Reverse Recovery
nS
Diode Reverse Recovery
nC
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a)
78°C/W when
mounted on a
0.5in
2
pad of 2
oz copper
b)
125°C/W when
mounted on a
0.02 in
2
pad of
2 oz copper
c)
135°C/W when
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS8333C 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDS8333C_Q 功能描述:MOSFET N & PCh PowerTrench 3V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS8433 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Single P-Channel 2.5V Specified MOSFET
FDS8433A 功能描述:MOSFET SO-8 SGL P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS8433A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SO-8