參數(shù)資料
型號: FDS7779Z
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 30 Volt P-Channel PowerTrench MOSFET
中文描述: 16 A, 30 V, 0.0072 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: SO-8
文件頁數(shù): 4/5頁
文件大?。?/td> 318K
代理商: FDS7779Z
FDS7779Z Rev C1 (W)
0
2
4
6
8
10
0
10
20
30
40
50
60
70
80
Q
g
, GATE CHARGE (nC)
-
G
,
I
D
= -16A
V
DS
= -10V
-15V
-20V
0
1000
2000
3000
4000
5000
0
5
10
15
20
25
30
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
ISS
C
OSS
C
RSS
f = 1 MHz
V
GS
= 0 V
0.01
0.1
1
10
100
0.01
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-
D
,
DC
1s
100ms
100
μ
s
1ms
R
DS(ON)
LIMIT
V
GS
= -10V
SINGLE PULSE
R
θ
JA
= 125
o
C/W
T
A
= 25
o
C
10ms
10s
0
0.001
10
20
30
40
50
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P
SINGLE PULSE
R
θ
JA
= 125°C/W
T
A
= 25°C
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
T
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 125
o
C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
F
Typical Characteristics
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
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