參數(shù)資料
型號(hào): FDS7779Z
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 30 Volt P-Channel PowerTrench MOSFET
中文描述: 16 A, 30 V, 0.0072 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: SO-8
文件頁(yè)數(shù): 1/5頁(yè)
文件大小: 318K
代理商: FDS7779Z
October 2003
S
D
S
S
SO-8
D
D
D
G
4
5
3
6
2
7
1
8
F
FDS7779Z
30 Volt P-Channel PowerTrench
MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.
P-Channel
MOSFET
has
been
designed
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
–16 A, –30 V. R
DS(ON)
= 7.2 m
@ V
GS
= –10 V
R
DS(ON)
= 11.5 m
@ V
GS
= – 4.5 V
ESD protection diode (note 3)
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Ratings
–30
±25
–16
–50
2.5
1.2
1
–55 to +150
Units
V
V
A
W
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
Power Dissipation for Single Operation
(Note 1a)
– Pulsed
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
50
25
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
FDS7779Z
FDS7779Z
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
2003 Fairchild Semiconductor Corporation
FDS7779Z Rev C1 (W)
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