參數(shù)資料
型號: FDS7779Z
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 30 Volt P-Channel PowerTrench MOSFET
中文描述: 16 A, 30 V, 0.0072 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: SO-8
文件頁數(shù): 3/5頁
文件大小: 318K
代理商: FDS7779Z
FDS7779Z Rev C1 (W)
0
10
20
30
40
50
0
0.5
1
1.5
2
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-
D
,
V
GS
= -10V
-6.0V
-3.0V
-3.5V
-4.5V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
0
15
30
45
60
-I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= - 3.5V
-6.0V
-4.5V
-10V
-5.0V
-8.0V
-4.0V
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
-50
-25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= -16A
V
GS
= -10V
0.01
0.01
0.02
0.02
0.03
0.03
2
4
6
8
10
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= -8A
T
A
= 125
o
C
T
A
= 25
o
C
0
20
40
60
80
1.5
2
2.5
3
3.5
4
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-
D
,
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= -5V
0.001
0.01
0.1
1
10
100
0
0.2
-V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1
1.2
-
S
,
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
F
Typical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
igure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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