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參數(shù)資料
| 型號： | FDS6975 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual P-Channel, Logic Level, PowerTrenchTM MOSFET |
| 中文描述： | 6 A, 30 V, 0.032 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, SO-8 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 249K |
| 代理商： | FDS6975 |
FDS6975 Rev.C
Typical Electrical Characteristics
(continued)
Figure 10. Single Pulse Maximum Power
Dissipation.
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area
.
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
0
6
12
18
24
30
0
2
4
6
8
10
Q , GATE CHARGE (nC)
-
G
I = -6A
D
V = -5V
-10V
-15V
0.1
0.2
0.5
1
2
5
10
20
30
100
200
500
1000
2000
3000
- V , DRAIN TO SOURCE VOLTAGE (V)
C
C ss
f = 1 MHz
V = 0 V
C ss
C ss
0.1
0.3
1
2
5
10
30
50
0.01
0.05
0.5
3
10
30
- V , DRAIN-SOURCE VOLTAGE (V)
-
RDS(ON)LMIT
D
DC
1s
100ms
10ms
1ms
10s
100us
V = -10V
SINGLE PULSE
R =135°C/W
T = 25°C
A
JA
0.01
0.1
0.5
10
50 100
300
0
5
10
15
20
25
30
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R =135°C/W
T = 25°C
A
JA
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t /t
2
R (t) = r(t) * R
R = 135°C/W
T - T = P * R JA
P(pk)
t
1
t
2
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| FDS6982 | Dual N-Channel, Notebook Power Supply MOSFET |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6975 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SO-8 |
| FDS6982 | 功能描述:MOSFET SO-8 N-CH 1&2 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6982 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SO-8 |
| FDS6982_L86Z | 功能描述:MOSFET SO-8 N-CH 1&2 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6982AS | 功能描述:MOSFET SO-8 N-CH 1&2 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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