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參數(shù)資料
| 型號： | FDS6982 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual N-Channel, Notebook Power Supply MOSFET |
| 中文描述： | 6.3 A, 30 V, 0.028 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, SO-8, 8 PIN |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 168K |
| 代理商： | FDS6982 |
March 2005
FDS6982AS
Dual Notebook Power Supply N-Channel PowerTrench
SyncFET
General Description
2005 Fairchild Semiconductor Corporation
FDS6982AS Rev A1(X)
The FDS6982AS is designed to replace two single SO-
8 MOSFETs and Schottky diode in synchronous
DC:DC power supplies that provide various peripheral
voltages for notebook computers and other battery
powered electronic devices. FDS6982AS contains two
unique 30V, N-channel, logic level, PowerTrench
MOSFETs designed to maximize power conversion
efficiency. The high-side switch (Q1) is designed with
specific emphasis on reducing switching losses while
the low-side switch (Q2) is optimized to reduce
conduction losses. Q2 also includes an integrated
Schottky diode using Fairchild’s monolithic SyncFET
technology.
Applications
Notebook
Features
Q2
:
Optimized to minimize conduction losses
Includes SyncFET Schottky body diode
R
DS(on)
max= 13.5m
@ V
GS
= 10V
R
DS(on)
max= 16.5m
@ V
GS
= 4.5V
8.6A, 30V
Low gate charge (21nC typical)
Q1
:
Optimized for low switching losses
R
DS(on)
max= 22.0m
@ V
GS
= 10V
R
DS(on)
max= 29.0m
@ V
GS
= 4.5V
6.3A, 30V
Low gate charge (11nC typical)
S2
SO-8
G2S1G1
D2
D2
D1
D1
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Q2
Q1
Units
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
30
±
20
8.6
30
30
±
20
6.3
20
V
V
A
W
(Note 1a)
- Pulsed
2
1.6
1
0.9
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
–55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
78
40
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
FDS6982AS
FDS6982AS
FDS6982AS
FDS6982AS_NL
(Note 4)
FDS6982AS
FDS6982AS_NF40
(Note 5)
Reel Size
13”
13”
13”
Tape width
12mm
12mm
12mm
Quantity
2500 units
2500 units
2500 units
F
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDS6982S | Dual Notebook Power Supply N-Channel PowerTrench SyncFet⑩ |
| FDS6984AS_NL | Dual Notebook Power Supply N-Channel PowerTrench SyncFET |
| FDS6984AS | Dual Notebook Power Supply N-Channel PowerTrench SyncFET |
| FDS6984S | Dual Notebook Power Supply N-Channel PowerTrench SyncFET⑩ |
| FDS6984SQ1 | Dual Notebook Power Supply N-Channel PowerTrench SyncFET⑩ |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6982 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SO-8 |
| FDS6982_L86Z | 功能描述:MOSFET SO-8 N-CH 1&2 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6982AS | 功能描述:MOSFET SO-8 N-CH 1&2 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6982AS | 制造商:Fairchild Semiconductor Corporation 功能描述:mOSFET |
| FDS6982AS_06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual Notebook Power Supply N-Channel PowerTrench SyncFET |
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