- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375783 > FDS6975 (FAIRCHILD SEMICONDUCTOR CORP) Dual P-Channel, Logic Level, PowerTrenchTM MOSFET PDF資料下載
參數(shù)資料
| 型號： | FDS6975 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual P-Channel, Logic Level, PowerTrenchTM MOSFET |
| 中文描述： | 6 A, 30 V, 0.032 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, SO-8 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 249K |
| 代理商： | FDS6975 |
FDS6975 Rev.C
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
.
Figure 2. On-Resistance Variation with
Dain Current and Gate Voltage
.
Figure 3. On-Resistance Variation with
Temperature
.
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Figure 4. On-Resistance
Variation with
Gate-to-Source Voltage.
0
6
12
18
24
30
0.5
1
1.5
2
2.5
- I , DRAIN CURRENT (A)
D
V = -3.5V
R
D
-10V
-7.0 V
-4.0 V
-5.5 V
-4.5 V
2
4
6
8
10
0
0.02
0.04
0.06
0.08
0.1
- V , GATE TO SOURCE VOLTAGE (V)
R
D
25° C
I = -3A
A
1.5
2
2.5
3
3.5
4
4.5
0
6
12
18
24
30
- V , GATE TO SOURCE VOLTAGE (V)
-
V = -5.0V
D
T = -55° C
125° C
25° C
0
0.3
0.6
0.9
1.2
1.5
0.001
0.01
0.1
1
10
30
- V , BODY DIODE FORWARD VOLTAGE (V)
-
25° C
-55° C
V = 0V
S
J
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (° C)
D
V = -10V
I = -6A
R
D
0
1
2
3
4
5
0
6
12
18
24
30
- V , DRAIN-SOURCE VOLTAGE (V)
-
D
-6.0V
-3.5V
-3.0V
V = -10V
-4.5V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDS6982AS | Dual Notebook Power Supply N-Channel PowerTrench SyncFET |
| FDS6982AS_NL | Dual Notebook Power Supply N-Channel PowerTrench SyncFET |
| FDS6982AS_NL40 | Dual Notebook Power Supply N-Channel PowerTrench SyncFET |
| FDS6982 | Dual N-Channel, Notebook Power Supply MOSFET |
| FDS6982S | Dual Notebook Power Supply N-Channel PowerTrench SyncFet⑩ |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6975 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SO-8 |
| FDS6982 | 功能描述:MOSFET SO-8 N-CH 1&2 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6982 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SO-8 |
| FDS6982_L86Z | 功能描述:MOSFET SO-8 N-CH 1&2 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6982AS | 功能描述:MOSFET SO-8 N-CH 1&2 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。