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參數(shù)資料
| 型號： | FDS6975 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual P-Channel, Logic Level, PowerTrenchTM MOSFET |
| 中文描述： | 6 A, 30 V, 0.032 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, SO-8 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 249K |
| 代理商： | FDS6975 |
February 1999
FDS6975
Dual P-Channel, Logic Level, PowerTrench
TM
MOSFET
General Description Features
Absolute Maximum Ratings
T
A
= 25
o
C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
-30
V
Gate-Source Voltage
±20
V
Drain Current - Continuous
(Note 1a)
-6
A
- Pulsed
-20
P
D
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
2
W
1.6
(Note 1b)
1
(Note 1c)
0.9
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
FDS6975 Rev.C
-6 A, -30 V. R
DS(ON)
= 0.032
@ V
GS
= -10 V,
R
DS(ON)
= 0.045
@ V
GS
= -4.5 V.
Low gate charge (14.5nC typical).
High performance trench technology for extremely low
R
DS(ON)
.
High power and current handling capability.
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
These P-Channel Logic Level MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
These devices are well suited for notebook computer
applications: load switching and power management,
battery charging circuits, and DC/DC conversion.
1
5
7
8
2
3
4
6
S1
D1
S2
G1
SO-8
D2
D2
D1
G2
FDS
6975
pin
1
1999 Fairchild Semiconductor Corporation
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6975 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SO-8 |
| FDS6982 | 功能描述:MOSFET SO-8 N-CH 1&2 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6982 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SO-8 |
| FDS6982_L86Z | 功能描述:MOSFET SO-8 N-CH 1&2 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6982AS | 功能描述:MOSFET SO-8 N-CH 1&2 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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