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參數(shù)資料
| 型號： | FDS6912A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual N-Channel, Logic Level, PowerTrenchTM MOSFET |
| 中文描述： | 6000 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 222K |
| 代理商： | FDS6912A |
FDS6912A Rev.C
0
1
V , DRAIN-SOURCE VOLTAGE (V)
2
3
4
0
8
16
24
32
40
I
D
3.5V
3.0V
V =10V
4.0V
5.5V
2.5V
4.5V
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
.
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
D
R
D
V = 10V
I = 6A
Figure 3. On-Resistance Variation with
Temperature
.
T = -55°C
1
2
3
4
5
0
5
10
15
20
25
V , GATE TO SOURCE VOLTAGE (V)
I
D
V =5.0V
DS
125°C
25°C
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Figure 4. On-Resistance
Variation with
Gate-to-Source Voltage.
0
6
12
18
24
30
0
1
2
3
4
5
I , DRAIN CURRENT (A)
D
V = 2.5V
R
D
10V
3.5 V
3.0 V
4.5 V
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.001
0.01
0.1
1
20
V , BODY DIODE FORWARD VOLTAGE (V)
I
S
25°C
-55°C
V = 0V
J
0
2
4
6
8
10
0
0.03
0.06
0.09
0.12
0.15
V , GATE TO SOURCE VOLTAGE (V)
R
D
25°C
I = 3A
T = 125°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6912A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDS6912A_03 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PowerTrench MOSFET |
| FDS6912A_Q | 功能描述:MOSFET Dual N-Channel 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6912A-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDS6912A Series 30 V 28 mOhm Dual N-Ch Logic Level PowerTrench Mosfet - SOIC-8 |
| FDS6921A | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
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