- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄375783 > FDS6694 (FAIRCHILD SEMICONDUCTOR CORP) 30V N-Channel Fast Switching PowerTrench MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | FDS6694 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 30V N-Channel Fast Switching PowerTrench MOSFET |
| 中文描述： | 12000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | LEAD FREE, SO-8 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 65K |
| 代理商： | FDS6694 |
December 2001
FDS6694
30V N-Channel Fast Switching PowerTrench
ò
MOSFET
2001 Fairchild Semiconductor Corporation
FDS6694 Rev D(W)
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS(ON)
and fast switching speed.
N-Channel
MOSFET
has
been
designed
Applications
DC/DC converter
Power management
Load switch
Features
12 A, 30 V.
R
DS(ON)
= 11 m
@ V
GS
= 10 V
R
DS(ON)
= 13.5 m
@ V
GS
= 4.5 V
Low gate charge (13 nC typical)
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability.
S
S
D
D
S
S
S
SO-8
D
D
D
G
D
D
D
S
G
Pin 1
SO-8
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Ratings
30
±
16
12
50
2.5
1.4
1.2
–55 to +175
Units
V
V
A
W
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
(Note 1a)
– Pulsed
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
50
125
25
°
C/W
°
C/W
°
C/W
(Note 1c)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
FDS6694
FDS6694
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDS6699S | 30V N-Channel PowerTrench SyncFET |
| FDS6812 | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| FDS6812A | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| FDS6814 | Dual N-Channel 2.5V Specified PowerTrench⑩ MOSFET |
| FDS6815 | Dual P-Channel 2.5V Specified PowerTrench⑩ MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6694 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDS6694_Q | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6699S | 功能描述:MOSFET 30V N-Ch PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6812 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| FDS6812A | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。