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參數(shù)資料
| 型號： | FDS6690AS_NL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30V N-Channel PowerTrench SyncFET |
| 中文描述： | 10000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | LEAD FREE, SO-8 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 203K |
| 代理商： | FDS6690AS_NL |
FDS6690
Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET
General Description Features
January 2000
Absolute Maximum Ratings
T
A
= 25
o
C unless other wise noted
Symbol
Parameter
FDS6690
Units
V
DSS
V
GSS
Drain-Source Voltage
30
V
Gate-Source Voltage
±20
V
I
D
Drain Current - Continuous
(Note 1a)
10
A
- Pulsed
50
P
D
Power Dissipation for Single Operation
(Note 1a)
2.5
W
(Note 1b)
1.2
(Note 1c)
1
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
FDS6690 Rev.C
10 A, 30 V. R
DS(ON)
= 0.0135
@ V
GS
= 10 V
R
DS(ON)
= 0.0200
@ V
GS
= 4.5 V.
Optimized for use in switching DC/DC converters with
PWM controllers.
Very fast switching .
Low gate charge (Qg typ = 13 nC).
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
This N Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional switching
PWM controllers.
The MOSFET features faster switching and lower gate charge
than other MOSFETs with comparable R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive (even at
very high frequencies), and DC/DC power supply designs with
higher overall efficiency.
1
6
7
8
2
4
3
5
S
D
S
S
SO-8
D
FDS
6690
D
D
G
pin
1
1998 Fairchild Semiconductor Corporation
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| FDS6812 | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6690S | 功能描述:MOSFET SO-8 SGL N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6690S | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS6692 | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6692A | 功能描述:MOSFET 30V 9A 11.5 OHM NCH POWER TR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6692A_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 30V, 9A, 11.5m?? |
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