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參數(shù)資料
| 型號： | FDS6689S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30V N-Channel PowerTrench SyncFET |
| 中文描述： | 16000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 120K |
| 代理商： | FDS6689S |
FDS6689S Rev
B
(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
V
GS
= 0 V,
I
D
= 1 mA, Referenced to 25
°
C
V
DS
= 24 V,
V
GS
= 0 V
V
GS
= ±20 V,
V
DS
= 0 V
I
D
= 1 mA
30
V
28
mV/
°
C
μ
A
nA
500
±100
On Characteristics
V
GS(th)
V
GS(th)
T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
,
I
D
= 1 mA, Referenced to 25
°
C
V
GS
= 10 V,
I
D
= 16 A
V
GS
= 4.5 V,
I
D
= 14.5 A
V
GS
=10 V, I
D
=16 A, T
J
=125
°
C
V
DS
= 10 V,
I
D
= 16 A
I
D
= 1 mA
1
1.6
3
V
–4
mV/
°
C
m
4.5
5.2
6.1
5.4
6.5
g
FS
Forward Transconductance
74
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
G
Gate Resistance
3290
890
290
1.5
pF
pF
pF
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
V
GS
= 15 mV,
f = 1.0 MHz
2.6
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g(TOT)
Total Gate Charge at V
GS
=10V
Q
g
Total Gate Charge at V
GS
=5V
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
12
12
30
60
56
31
8.2
9.0
22
22
46
96
78
44
ns
ns
ns
ns
nC
nC
nC
nC
V
DD
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 15 V,
I
D
= 16 A
Drain–Source Diode Characteristics and Maximum Ratings
V
SD
Drain–Source Diode Forward
Voltage
t
rr
Diode Reverse Recovery Time
I
RM
Diode Reverse Recovery Current
Q
rr
Diode Reverse Recovery Charge
V
GS
= 0 V,
I
F
= 16 A,
d
iF
/d
t
= 300 A/μs
I
S
= 3.5 A
(Note 2)
380
700
mV
30
2
31
ns
A
nC
(Note 3)
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 50°/W when
mounted on a 1 in
2
pad of 2 oz copper
b) 105°/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%.
3. See “SyncFET Schottky body diode characteristics” below.
F
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6690 | 功能描述:MOSFET USE 512-FDS6690A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6690A | 功能描述:MOSFET SO-8 SGL N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6690A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS6690A_NL | 制造商:Fairchild 功能描述:30V N-CH,FET,12.5MO,SO8 |
| FDS6690A_Q | 功能描述:MOSFET SO-8 SGL N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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