參數(shù)資料
型號: FDS6688S
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: 30V N-Channel PowerTrench SyncFET
中文描述: 16000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SO-8
文件頁數(shù): 3/6頁
文件大小: 164K
代理商: FDS6688S
FDS6688S Rev C (W)
Typical Characteristics
0
10
20
30
40
50
0
0.25
V
DS
, DRAIN-SOURCE VOLTAGE (V)
0.5
0.75
1
I
D
,
2.5V
3.5V
V
GS
= 10V
4.5V
3.0V
2.0V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
0
10
30
40
50
I
D
, D20
R
D
,
D
V
GS
= 2.5V
4.5V
3.0V
3.5V
10V
6.0V
4.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= 16.0A
V
GS
=10V
0.004
0.006
0.008
0.01
0.012
0.014
0.016
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= 8.0A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
1
1.5
V
GS
, GATE TO SO2
2.5
3
I
D
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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