參數(shù)資料
型號(hào): FDS6680
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET
中文描述: 11500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SO-8
文件頁數(shù): 3/8頁
文件大?。?/td> 551K
代理商: FDS6680
FDS6680AS Rev B(X)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Test Conditions
Parameter
Min
Typ
Max Units
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
T
rr
Diode Reverse Recovery Time
3.5
A
V
GS
= 0 V,
V
GS
= 0 V,
I
F
= 11.5A,
I
S
= 3.5 A
I
S
= 7 A
(Note 2)
(Note 2)
0.5
0.6
18
0.7
V
nS
Q
rr
Diode Reverse Recovery Charge
d
iF
/d
t
= 300 A/μs
(Note 3)
12
nC
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 50°/W when
mounted on a 1 in
2
pad of 2 oz copper
b) 105°/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
3.
See “SyncFET Schottky body diode characteristics” below.
4.
FDS6680AS_NL is a lead free product. The FDS6680AS_NL marking will appear on the reel label.
F
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