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參數(shù)資料
| 型號(hào)： | FDS6680 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET |
| 中文描述： | 11500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 551K |
| 代理商： | FDS6680 |
FDS6680AS Rev B(X)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ
Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSS
Gate–Body Leakage
V
GS
= 0 V, I
D
= 1 mA
30
V
Breakdown Voltage Temperature
I
D
= 1 mA, Referenced to 25
°
C
29
mV/
°
C
V
DS
= 24 V,
V
GS
=
±
20 V,
V
GS
= 0 V
V
DS
= 0 V
500
±
100
μ
A
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
, I
D
= 1 mA
I
D
= 1 mA, Referenced to 25
°
C
V
GS
= 10 V,
V
GS
= 4.5 V,
V
GS
=10 V, I
D
=11.5A, T
J
=125
°
C
V
GS
= 10 V,
V
DS
= 15 V,
1
1.5
3
V
Gate Threshold Voltage
–3
mV/
°
C
I
D
= 11.5 A
I
D
= 9.5 A
8.4
10.3
12.3
10.0
12.5
15.5
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
V
DS
= 5 V
I
D
= 11.5 A
50
A
S
48
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
G
Gate Resistance
1240
350
120
1.4
pF
pF
pF
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
V
GS
= 15 mV,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
(TOT)
Total Gate Charge at Vgs=10V
Q
g
Total Gate Charge at Vgs=5V
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
9
5
27
11
11
12
18
11
22
12
3.5
3.4
18
10
42
21
20
22
32
20
30
16
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
nC
V
DS
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 15 V,
V
GS
= 4.5 V,
I
D
= 1 A,
R
GEN
= 6
V
DD
= 15 V, I
D
= 11.5 A,
F
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6680 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS6680_L99Z | 功能描述:MOSFET N-Channel PWM Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS66805 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDS6680A | 功能描述:MOSFET SO-8 SGL N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6680A_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Single N-Channel, Logic Level, PowerTrench?? MOSFET |
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