參數(shù)資料
型號(hào): FDS4675
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 40V P-Channel PowerTrench MOSFET
中文描述: 11 A, 40 V, 0.013 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: SO-8
文件頁數(shù): 1/5頁
文件大?。?/td> 73K
代理商: FDS4675
February 2001
FDS4675
40V P-Channel PowerTrench
ò
MOSFET
2001 Fairchild Semiconductor Corporation
FDS4675 Rev C(W)
General Description
This PChannel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 20V).
Applications
Power management
Load switch
Battery protection
Features
–11 A, –40 V
R
DS(ON)
= 0.013
@ V
GS
= –10 V
R
DS(ON)
= 0.017
@ V
GS
= –4.5 V
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
D
D
S
SO-8
D
D
D
D
D
D
SSS
G
Pin 1
SO-8
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
40
±
20
11
50
2.4 (steady state)
1.4
1.2
-55 to +175
Units
V
V
A
W
(Note 1a)
(Note 1a)
(Note 1b)
P
D
(Note 1c)
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
62.5 (steady state), 50 (10 sec)
125
25
°
C/W
°
C/W
°
C/W
(Note 1c)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
FDS4675
FDS4675
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS4675 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SMD SO-8
FDS4675 制造商:Fairchild Semiconductor Corporation 功能描述:S0-8 SINGLE PCH 40V/20V:ROHS COMPLIAN
FDS4675_10 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:40V P-Channel Power TrenchMOSFET
FDS4675_F085 功能描述:MOSFET P-CHANNEL MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS4685 功能描述:MOSFET 40V PCH POWER TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube