參數(shù)資料
型號(hào)： FDS4480
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 40V N-Channel PowerTrench MOSFET
中文描述： 10.8 A, 40 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： SO-8
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 88K
代理商： FDS4480
FDS4480 Rev D (W)
Electrical Characteristics
Symbol
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Min Typ Max Units
Drain-Source Avalanche Ratings
(Note 2)
E
AS
Drain-Source Avalanche Energy
I
AS
Drain-Source Avalanche Current
Single Pulse, V
DD
=40V, I
D
=10.8A
240
10.8
mJ
A
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V,
I
D
= 250
μ
A, Referenced to 25
°
C
V
DS
= 32 V,
V
GS
= 0 V
V
GS
= 30 V,
V
DS
= 0 V
V
GS
= –20 V, V
DS
= 0 V
I
D
= 250
μ
A
40
V
Breakdown Voltage Temperature
42
mV/
°
C
μ
A
nA
nA
1
100
–100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source On–Resistance
(Note 2)
V
DS
= V
GS
,
I
D
= 250
μ
A, Referenced to 25
°
C
V
GS
= 10 V,
I
D
= 10.8 A
V
GS
= 10 V,I
D
= 10.8 A, T
J
=125
°
C
V
GS
= 10 V,
V
DS
= 5 V
V
DS
= 10 V, I
D
= 10.8 A
I
D
= 250
μ
A
2
3.9
–8
8
13
36
5
V
Gate Threshold Voltage
mV/
°
C
m
12
21
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
22
A
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
1686
384
185
pF
pF
pF
V
DS
= 20 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
12
9
30
15
29
17
4
22
18
48
27
41
ns
ns
ns
ns
nC
nC
nC
V
DD
= 20 V,
V
GS
= 10 V, R
GEN
= 6
I
D
= 1 A,
V
DS
= 20 V, I
D
= 10.8 A,
V
GS
= 10 V
F
相關(guān)PDF資料
PDF描述
FDS4488 30V N-Channel PowerTrench MOSFET
FDS4501H Complementary PowerTrench Half-Bridge MOSFET
FDS4559 60V Complementary PowerTrench MOSFET
FDS4672A 40V N-Channel PowerTrench MOSFET
FDS4675 40V P-Channel PowerTrench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS4480_Q 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS4488 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS4501H 功能描述:MOSFET SO-8 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS4559 功能描述:MOSFET 60V/-60V N/P RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS4559 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
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