參數(shù)資料
型號： FDS3680
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： 100V N-Channel PowerTrench MOSFET
中文描述： 5200 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SO-8
文件頁數(shù)： 2/8頁
文件大?。?/td> 202K
代理商： FDS3680
FDS3680 Rev B1 (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage Current,
Forward
I
GSSR
Gate–Body Leakage Current,
Reverse
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= 0 V, I
D
= 250
μ
A
I
D
= 250
μ
A,Referenced to 25
°
C
100
V
Breakdown Voltage Temperature
101
mV/
°
C
V
DS
= 80 V,
V
GS
= 20 V,
V
GS
= 0 V
V
DS
= 0 V
25
100
μ
A
nA
V
GS
= –20 V
V
DS
= 0 V
–100
nA
(Note 2)
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A,Referenced to 25
°
C
2
2.4
–6.5
4
V
Gate Threshold Voltage
mV/
°
C
V
GS
= 10 V,
V
GS
= 10 V,
I
D
= 5.2 A
I
D
= 5.2 A
T
J
=125
°
C
I
D
= 4.5 A
V
DS
= 5 V
I
D
= 5.2 A
V
GS
= 6 V,
V
GS
= 10 V,
V
DS
= 5 V,
0.032
0.061
0.034
0.043
0.086
0.048
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
25
A
S
25
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
1735
176
53
pF
pF
pF
V
DS
= 50 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
14
8.5
63
21
38
8.1
9.2
25
17
94
34
53
ns
ns
ns
ns
nC
nC
nC
V
DD
= 50 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 10
V
DS
= 50 V,
V
GS
= 10 V
I
D
= 6 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
2.1
1.2
A
V
V
GS
= 0 V,
I
S
= 2.1 A
(Note 2)
0.73
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 50°C/W when
mounted on a 1in
2
pad of 2 oz copper
b) 105°C/W when
mounted on a 0.04
in
pad of 2 oz
copper
c) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS3680_0011 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:100V N-Channel PowerTrench MOSFET
FDS3682 功能描述:MOSFET 100V 6a .35Ohm/VGS=1V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS3682_NL 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
FDS3682_Q 功能描述:MOSFET 100V 6a .35Ohm/VGS=1V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS3690 功能描述:MOSFET SO-8 N-CH 100V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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