參數(shù)資料
型號(hào): FDS2582
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 12 AMP MINIATURE POWER RELAY
中文描述: 4.1 A, 150 V, 0.066 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: SO-8
文件頁(yè)數(shù): 5/11頁(yè)
文件大?。?/td> 283K
代理商: FDS2582
2002 Fairchild Semiconductor Corporation
FDS2582 Rev. B
F
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge Waveforms for Constant
Gate Currents
Typical Characteristics
T
A
= 25
°
C unless otherwise noted
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
T
0.9
1.0
1.1
1.2
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
I
D
= 250
μ
A
B
10
100
1000
0.1
1
10
150
3000
C
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
2
4
6
8
10
0
5
10
15
20
V
G
,
Q
g
, GATE CHARGE (nC)
V
DD
= 75V
D
= 4.1A
I
D
= 2A
WAVEFORMS IN
DESI
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS2582 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8
FDS2582_Q 功能描述:MOSFET 150V 4.5a .6 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS2670 功能描述:MOSFET SO-8 N-CH 200V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS2670 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
FDS2670_01 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V N-Channel PowerTrench MOSFET