參數(shù)資料
型號(hào): FDS2582
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 12 AMP MINIATURE POWER RELAY
中文描述: 4.1 A, 150 V, 0.066 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: SO-8
文件頁數(shù): 3/11頁
文件大?。?/td> 283K
代理商: FDS2582
2002 Fairchild Semiconductor Corporation
FDS2582 Rev. B
F
Typical Characteristics
T
A
= 25
°
C unless otherwise noted
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 3. Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
T
A
, AMBIENT TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
0
1
2
3
4
5
25
50
75
100
125
150
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
V
GS
= 10V
0.001
0.01
0.1
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
2
t, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
PEAK T
J
= P
DM
x Z
θ
JA
x R
θ
JA
+ T
A
P
DM
t
1
t
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
T
R
θ
JA
=50
o
C/W
1
10
100
400
10
-5
10
-4
10
-3
10
-2
t, PULSE WIDTH (s)
10
-1
10
0
10
1
10
2
10
3
I
D
,
TRANSCONDUCTANCE
MAY LIMIT CURRENT
V
GS
= 10V
T
A
= 25
o
C
FOR TEMPERATURES
ABOVE 25
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
150 - T
C
125
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS2582 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8
FDS2582_Q 功能描述:MOSFET 150V 4.5a .6 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS2670 功能描述:MOSFET SO-8 N-CH 200V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS2670 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
FDS2670_01 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V N-Channel PowerTrench MOSFET