參數(shù)資料
型號: FDS2570
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 150V N-Channel PowerTrench MOSFET
中文描述: 4 A, 150 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: SOIC-8
文件頁數(shù): 4/8頁
文件大?。?/td> 232K
代理商: FDS2570
FDS2570 Rev B(W)
Typical Characteristics
0
2
4
6
8
10
0
10
20
30
40
Q
g
, GATE CHARGE (nC)
I
D
= 4.3 A
V
DS
= 25 V
75
50 V
0
500
1000
1500
2000
2500
3000
0
10
20
30
40
50
60
70
80
90
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.001
0.01
0.1
1
10
100
0.1
1
10
100
1000
V
DS
, DRAIN-SOURCE VOLTAGE (V)
DC
10s1s
100ms
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 125
o
C/W
T
A
= 25
o
C
10ms
1ms
100us
0
0.001
20
40
60
80
0.01
0.1
1
10
100
t
1
, TIME (sec)
SINGLE PULSE
R
θ
JA
= 125 °C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
R
θ
JA
(t) = r(t) + R
θ
JA
R
θ
JA
= 125 °C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
F
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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