參數(shù)資料
型號: FDR8702H
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: 20V N & P-Channel PowerTrench MOSFET
中文描述: 3600 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SUPERSOT-8
文件頁數(shù): 4/8頁
文件大?。?/td> 200K
代理商: FDR8702H
FDR8702H Rev C (W)
Typical Characteristics : Q1
0
3
6
9
12
15
0
0.5
1
1.5
2
2.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
V
GS
= 4.5V
2.5V
2.0V
3.0V
1.5V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0
3
6
9
12
15
I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= 2.0V
4.5V
3.0V
3.5V
2.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= 3.6A
V
GS
= 4.5V
0.02
0.04
0.06
0.08
0.1
0.12
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= 1.8A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
3
6
9
12
15
0.5
1
1.5
2
2.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
I
S
,
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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