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參數(shù)資料
| 型號： | FDR8702H |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 20V N & P-Channel PowerTrench MOSFET |
| 中文描述： | 3600 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 200K |
| 代理商： | FDR8702H |
March 2003
2003 Fairchild Semiconductor Corp.
FDR8702H Rev C (W)
FDR8702H
20V N & P-Channel PowerTrench
MOSFET
General Description
These N & P-Channel MOSFETs are produced
using
Fairchild
Semiconductor’s
PowerTrench process that has been especially
tailored to minimize on-state resistance and yet
maintain superior switching performance.
advanced
Applications
DC/DC converter
Power management
Features
N channel
3.6 A, 20V
R
DS(ON)
= 38 m
@ V
GS
= 4.5 V
R
DS(ON)
= 54 m
@ V
GS
= 2.5 V
P channel
–2.6 A, –20V
R
DS(ON)
= 80 m
@ V
GS
= –4.5 V
R
DS(ON)
= 110 m
@ V
GS
= –2.5 V
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
S2
D
S1G2
D
D
G1
SuperSOT -8
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
Ratings
Units
Q1 (N)
20
±12
3.6
15
Q2 (P)
–20
±8
–2.6
–10
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current– Continuous
– Pulsed
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
V
V
A
(Note 1a)
P
D
T
J
, T
STG
(Note 1a)
0.8
W
°
C
–55 to +150
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
146
76
40
°
C/W
(Note 1b)
R
θ
JC
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
.8702
FDR8702H
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
4
5
3
6
2
7
1
8
Q2(P)
Q1(N)
4
3
2
1
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