參數(shù)資料
型號(hào)： FDS2070N7
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 150V N-Channel PowerTrench MOSFET
中文描述： 4.1 A, 150 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： FLMP, SO-8
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 200K
代理商： FDS2070N7
May 2003
FDS2070N7
150V N-Channel PowerTrench
MOSFET
2002 Fairchild Semiconductor International
FDS2070N7 Rev C2(W)
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“l(fā)ow side” synchronous rectifier operation, providing an
extremely low R
DS(ON)
in a small package.
N-Channel
MOSFET
has
been
designed
Applications
Synchronous rectifier
DC/DC converter
Features
4.1 A, 150 V. R
DS(ON)
= 78 m
@ V
GS
= 10 V
R
DS(ON)
= 88 m
@ V
GS
= 6.0 V
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
Fast switching, low gate charge (38nC typical)
FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
4
3
2
1
5
6
7
8
Bottom-side
Drain Contact
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
Parameter
Ratings
150
±
20
4.1
30
3.0
1.8
–55 to +150
Units
V
V
A
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
Power Dissipation for Single Operation
(Note 1a)
– Pulsed
P
D
(Note 1a)
W
(Note 1b)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
40
0.5
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
FDS2070N7
FDS2070N7
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
相關(guān)PDF資料
PDF描述
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