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參數(shù)資料
| 型號： | FDS2170N7 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 200V N-Channel PowerTrench MOSFET |
| 中文描述： | 3 A, 200 V, 0.128 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | FLMP, SO-8 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 201K |
| 代理商： | FDS2170N7 |
May 2003
FDS2170N3
200V N-Channel PowerTrench
MOSFET
2002 Fairchild Semiconductor Corporation
FDS2170N3 Rev B1W)
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“l(fā)ow side” synchronous rectifier operation, providing an
extremely low R
DS(ON)
in a small package.
N-Channel
MOSFET
has
been
designed
Applications
Synchronous rectifier
DC/DC converter
Features
3.0 A, 200 V. R
DS(ON)
= 128 m
@ V
GS
= 10 V
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
Fast switching, low gate charge (26nC typical)
FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
4
5
3
6
2
7
1
8
Bottom-side
Drain Contact
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
Ratings
200
±
20
3.0
20
3.0
1.8
–55 to +150
Units
V
V
A
(Note 1a)
P
D
(Note 1a)
W
(Note 1b)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
40
0.5
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
FDS2170N3
FDS2170N3
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
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| FDS2570 | 功能描述:MOSFET SO-8 N-CH 150V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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