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參數(shù)資料
| 型號： | FDR8521L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel MOSFET With Gate Driver For Load Switch Application |
| 中文描述： | 2900 mA, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 224K |
| 代理商： | FDR8521L |
F
FDR8521L Rev. C
Electrical Characteristics
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
OFF Characteristics
I
FL
Forward Leakage Current
V
IN
= 20 V, V
ON/OFF
= 250
μ
A
1
μ
A
ON Characteristics
(Note 3)
V
DROP
Conduction Voltage
V
IN
= 12 V, V
ON/OFF
= 3.3 V, I
L
= 1 A
V
IN
= 5 V, V
ON/OFF
= 3.3 V, I
L
= 1 A
V
IN
= 12 V, V
ON/OFF
= 3.3 V, I
L
= 2.9 A
V
IN
= 5 V, V
ON/OFF
= 3.3 V, I
L
= 1.8 A
V
GS
= -12 V, I
D
= 2.9 A
V
GS
= -5 V, I
D
= 1.8 A
V
DROP
= 0.2 V, V
IN
= 12 V, V
ON/OFF
= 3.3 V
V
DROP
= 0.2 V, V
IN
= 5 V, V
ON/OFF
= 3.3 V
0.053
0.085
0.070
0.115
0.200
0.200
0.070
0.115
V
R
(ON)
Q
2
- Static On-Resistance
0.054
0.090
I
L
Load Current
2.9
1.8
A
Notes:
1. Range of V
IN
can be up to 25V, but R1 and R2 must be scaled such that V
GS
of Q2 does not exceed -20V.
2. R
θ
JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. R
θ
JC is guaranteed by design while R
θ
JA is determined by the user’s board design.
3. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
FDR8521L Load Switch Application
APPLICATION CIRCUIT
External Component Recommendation:
For applications where Co
≤
1
μ
F.
For slew rate control, select R2 in the range of 470 - 10k
.
For additional in-rush current control,C1
≤
1000pF can be added.
Select R1 so that the R1/R2 ratio ranges from 10 - 100. R1 is required to turn Q2 off.
IN
OUT
R1
R2
C1
LOAD
Co
Q2
ON/OFF
Q1
Ci
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相關(guān)代理商/技術(shù)參數(shù) |
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| FDR8521L_Q | 功能描述:MOSFET SSOT-8 LD SW 3-20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDR856P | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDR858P | 功能描述:MOSFET SSOT-8 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDR858P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SUPERSOT-8 |
| FDR8702H | 功能描述:MOSFET N & PCh PowerTrench 20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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