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參數(shù)資料
| 型號： | FDN338 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | P溝道增強模式的邏輯電平場效應晶體管 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 85K |
| 代理商： | FDN338 |
FDN338P Rev.D
0
2
4
6
8
0
1
2
3
4
5
Q , GATE CHARGE (nC)
-
G
V = -5V
I = -1.6A
-15V
0.1
0.2
0.5
1
2
5
10
20
40
0.01
0.05
0.1
0.5
1
2
5
10
- V , DRAIN-SOURCE VOLTAGE (V)
-
RDS(ON) LIMIT
D
A
T = 25°C
DC
1s
100ms
10ms
1ms
10s
V = -4.5V
SINGLE PULSE
R =250°C/W
JA
0
0.001
0.01
SINGLE PULSE TIME (SEC)
0.1
1
10
100 300
10
20
30
40
50
P
SINGLE PULSE
R =250° C/W
T = 25°C
θ
JA
Figure 10. Single Pulse Maximum Power
Dissipation.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
R (t) = r(t) * R
R = 250 °C/W
Duty Cycle, D = t /t
2
T - T = P * R JA
P(pk)
t
1
t
2
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Figure 11. Transient Thermal Response Curve.
0.1
0.2
0.5
1
2
5
10
20
20
50
100
200
400
600
1000
-V , DRAIN TO SOURCE VOLTAGE (V)
C
C s
f = 1 MHz
V = 0 V
C ss
C s
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
Typical Electrical Characteristics
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDN338P | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDN339AN | N-Channel 2.5V Specified PowerTrench MOSFET |
| FDN340 | Single P-Channel, Logic Level, PowerTrench MOSFET |
| FDN340P | Single P-Channel, Logic Level, PowerTrench MOSFET |
| FDN342P | P-Channel 2.5V Specified PowerTrench⑩ MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDN338P | 功能描述:MOSFET SSOT-3 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| fdn338p | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P-CH 20V 1.6A 3-SSOT RL |
| FDN338P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23 |
| FDN338P_G | 制造商:Fairchild 功能描述:20V, 130MR, MOSFET, SOT23 |
| FDN338P_Q | 功能描述:MOSFET SSOT-3 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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