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參數資料
| 型號： | FDN338 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | P溝道增強模式的邏輯電平場效應晶體管 |
| 文件頁數： | 3/4頁 |
| 文件大?。?/td> | 85K |
| 代理商： | FDN338 |
FDN338P Rev.D
0
1
2
3
4
5
0
2
4
6
8
10
-V , DRAIN-SOURCE VOLTAGE (V)
-
D
V = -4.5V
-4.0
-3.5
-2.5
-3.0
-2.0
-1.5
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
.
R
D
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
D
V = -4.5V
I = -1.6A
Figure 3. On-Resistance Variation
with Temperature
.
0
1
2
3
4
0
2
4
6
8
10
-V , GATE TO SOURCE VOLTAGE (V)
-
D
V = -5V
T = -55°C
125°C
25°C
Figure 5. Transfer Characteristics.
0
0.2
-V , BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1
1.2
1.4
0.0001
0.001
0.01
0.1
1
10
-
S
25°C
-55°C
V = 0V
J
Figure 4. On-Resistance
Variation with
Gate-to-Source Voltage.
1
2
3
4
5
0
0.1
0.2
0.3
0.4
0.5
-V ,GATE TO SOURCE VOLTAGE (V)
R
25°C
T = 125°C
I = -0.8A
D
0
2
4
6
8
10
0.8
1
1.2
1.4
1.6
1.8
2
-I , DRAIN CURRENT (A)
D
V = -2.0V
R
D
-3.0
-3.5
-4.5
-4.0
-2.5
Figure 6 . Body Diode Forward Voltage
Variation with Source Current
and Temperature.
相關PDF資料 |
PDF描述 |
|---|---|
| FDN338P | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDN339AN | N-Channel 2.5V Specified PowerTrench MOSFET |
| FDN340 | Single P-Channel, Logic Level, PowerTrench MOSFET |
| FDN340P | Single P-Channel, Logic Level, PowerTrench MOSFET |
| FDN342P | P-Channel 2.5V Specified PowerTrench⑩ MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDN338P | 功能描述:MOSFET SSOT-3 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| fdn338p | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P-CH 20V 1.6A 3-SSOT RL |
| FDN338P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23 |
| FDN338P_G | 制造商:Fairchild 功能描述:20V, 130MR, MOSFET, SOT23 |
| FDN338P_Q | 功能描述:MOSFET SSOT-3 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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