參數(shù)資料
型號： FDN304PZ
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： P-Channel 1.8V Specified PowerTrench MOSFET
中文描述： 2400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SUPERSOT-3
文件頁數(shù)： 2/5頁
文件大?。?/td> 123K
代理商： FDN304PZ
FDN304PZ Rev C (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSS
Gate–Body Leakage
V
GS
= 0 V, I
D
= –250
μ
A
I
D
= –250
μ
A,Referenced to 25
°
C
–20
V
Breakdown Voltage Temperature
–13
mV/
°
C
V
DS
= –16 V,
V
GS
=
±
8 V, V
DS
= 0 V
V
GS
= 0 V
–1
±
10
μ
A
uA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
, I
D
= –250
μ
A
I
D
= –250
μ
A,Referenced to 25
°
C
V
GS
= –4.5 V,
I
D
= –2.4 A
V
GS
= –2.5 V,
I
D
= –2.0 A
V
GS
= –1.8V,
I
D
= –1.8 A
V
GS
= –4.5 V,
V
DS
= –5 V
V
DS
= –5 V,
I
D
= –1.25 A
–0.4
–0.8
3
–1.5
V
Gate Threshold Voltage
mV/
°
C
36
47
65
12
52
70
100
m
A
S
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
–10
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
G
Gate Resistance
1310
240
106
5.6
pF
pF
pF
V
DS
= –10 V,
f = 1.0 MHz
V
GS
= 0 V,
V
GS
= 15 mV, f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
15
15
40
25
12
2
2
27
27
64
40
20
ns
ns
ns
ns
nC
nC
nC
V
DD
= –10 V,
V
GS
= –4.5 V,
I
D
= –1 A,
R
GEN
= 6
V
DS
= –10 V,
V
GS
= –4.5 V
I
D
= –2.4 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
–0.42
–1.2
A
V
ns
nC
V
GS
= 0 V,
I
S
= –0.42
(Note 2)
–0.6
18
7
I
F
= –2.4 A,
d
iF
/d
t
= 100 A/μs
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 250
°
C/W when mounted on a
0.02 in
2
pad of 2 oz. copper.
b) 270°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
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PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDN304PZ_Q 功能描述:MOSFET P-Ch PowerTrench Specified 1.8V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDN306P 功能描述:MOSFET P-Ch PowerTrench Specified 1.8V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDN306P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDN306P_G 制造商:Fairchild 功能描述:MOSET , -12V/2.6A, SSOT3
FDN306P-CUT TAPE 制造商:FAIRCHILD 功能描述:FDN306P Series 12 V 40 mOhm P-Channel 1.8V Specified PowerTrench Mosfet SSOT-3
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