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參數(shù)資料
| 型號(hào)： | FDN306P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | P-Channel 1.8V Specified PowerTrench MOSFET |
| 中文描述： | 2600 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-3 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 144K |
| 代理商： | FDN306P |
December 2001
2001 Fairchild Semiconductor Corporation
FDN306P Rev D (W)
FDN306P
P-Channel 1.8V Specified PowerTrench
MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
Battery management
Load switch
Battery protection
Features
–2.6 A, –12 V.
R
DS(ON)
= 40 m
@ V
GS
= –4.5 V
R
DS(ON)
= 50 m
@ V
GS
= –2.5 V
R
DS(ON)
= 80 m
@ V
GS
= –1.8 V
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
SuperSOT
TM
-3 provides low R
DS(ON)
and 30% higher
power handling capability than SOT23 in the same
footprint
G
D
S
SuperSOT -3
D
S
G
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Ratings
–12
±
8
–
2.6
–
10
0.5
0.46
–55 to +150
Units
V
V
A
W
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
Maximum Power Dissipation
(Note 1a)
– Pulsed
(Note 1a)
(Note 1b)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
306
FDN306P
(Note 1a)
250
75
°
C/W
°
C/W
(Note 1)
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDN306P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDN306P_G | 制造商:Fairchild 功能描述:MOSET , -12V/2.6A, SSOT3 |
| FDN306P-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDN306P Series 12 V 40 mOhm P-Channel 1.8V Specified PowerTrench Mosfet SSOT-3 |
| FDN308P | 功能描述:MOSFET P-Ch PowerTrench Specified 2.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDN308P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
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