參數(shù)資料
型號: FDN308P
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: P-Channel 2.5V Specified PowerTrench MOSFET
中文描述: 1500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SUPERSOT-3
文件頁數(shù): 1/5頁
文件大?。?/td> 96K
代理商: FDN308P
February 2001
FDN308P
P-Channel 2.5V Specified PowerTrench
MOSFET
2001 Fairchild Semiconductor Corporation
FDN308P Rev B(W)
General Description
This P-Channel 2.5V specified MOSFET uses a rugged
gate version of Fairchild’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 12V).
Applications
Power management
Load switch
Battery protection
Features
–20 V, –1.5 A.
R
DS(ON)
= 125 m
@ V
GS
= –4.5 V
R
DS(ON)
= 190 m
@ V
GS
= –2.5 V
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
SuperSOT
TM
-3 provides low R
DS(ON)
and 30% higher
power handling capability than SOT23 in the same
footprint
G
D
S
SuperSOT -3
D
S
G
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
Maximum Power Dissipation
P
D
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
–20
±
12
–1.5
–10
0.5
0.46
–55 to +150
Units
V
V
A
W
(Note 1a)
(Note 1a)
(Note 1b)
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
250
75
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
308
FDN308P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDN308P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
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