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參數(shù)資料
| 型號： | FDN302P_NL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | 2400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-3 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 103K |
| 代理商： | FDN302P_NL |
FDN302P Rev C(W)
Typical Characteristics
0
1
2
3
4
5
02468
10
Qg, GATE CHARGE (nC)
-V
GS
,G
A
TE
-S
O
URCE
V
O
LTAG
E
(
V
)
ID = -2.4A
VDS = -5V
-15V
-10V
0
200
400
600
800
1000
1200
1400
0
2468
10
12
-VDS, DRAIN TO SOURCE VOLTAGE (V)
CAP
ACITANCE
(
p
F
)
CISS
C
RSS
C
OSS
f = 1MHz
V
GS = 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
-I
D
,DRAIN
CURRE
NT
(
A
)
DC
10s
1s
100ms
R
DS(ON) LIMIT
VGS =-4.5V
SINGLE PULSE
RθJA = 270
oC/W
T
A = 25
oC
10ms
1ms
0
5
10
15
20
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
P
(pk
),
P
E
AK
TRANS
IE
NT
P
O
WE
R
(
W
)
SINGLE PULSE
RθJA = 270°C/W
TA = 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
r(t),
NO
RM
ALIZED
EFFECTIVE
T
RANSI
E
NT
T
H
ERM
A
L
RESI
ST
ANCE
RθJA(t) = r(t) + RθJA
RθJA = 270 °C/W
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
P(pk)
t1
t2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
F
DN30
2
P
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