- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄296001 > FDN302P_NL (FAIRCHILD SEMICONDUCTOR CORP) P-Channel 2.5V Specified PowerTrench MOSFET PDF資料下載
參數(shù)資料
| 型號： | FDN302P_NL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | 2400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-3 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 103K |
| 代理商： | FDN302P_NL |
October 2000
2000 Fairchild Semiconductor Corporation
FDN302P Rev C(W)
FDN302P
P-Channel 2.5V Specified PowerTrench
MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses a rugged
gate version of Fairchild’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 12V).
Applications
Power management
Load switch
Battery protection
Features
–20 V, –2.4 A. R
DS(ON) = 0.055
@ V
GS = –4.5 V
RDS(ON) = 0.080
@ V
GS = –2.5 V
Fast switching speed
High performance trench technology for extremely
low RDS(ON)
SuperSOTTM -3 provides low R
DS(ON) and 30% higher
power handling capability than SOT23 in the same
footprint
G
D
S
SuperSOT -3
TM
D
S
G
Absolute Maximum Ratings
TA=25
oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–20
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current
– Continuous
(Note 1a)
–2.4
A
– Pulsed
–10
Maximum Power Dissipation
(Note 1a)
0.5
PD
(Note 1b)
0.46
W
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
250
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
75
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
302
FDN302P
7’’
8mm
3000 units
F
DN30
2
P
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDN359AN_NL | N-Channel Logic Level PowerTrench MOSFET |
| FDN360P_NL | Single P-Channel PowerTrench MOSFET |
| FDN361AN_NL | N-Channel Logic Level PowerTrench MOSFET |
| FDN59501 | 7 SEG NUMERIC DISPLAY, GREEN, 10 mm |
| FDV0840-2R1M | 1 ELEMENT, 2.1 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDN304P | 功能描述:MOSFET SSOT-3 P-CH 1.8V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDN304P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23 |
| FDN304P_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 1.8V Specified PowerTrench MOSFET |
| FDN304P-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDN304P Series 20 V 52 mOhm P-Channel 1.8V Specified PowerTrench Mosfet SSOT-3 |
| FDN304PZ | 功能描述:MOSFET P-Ch PowerTrench Specified 1.8V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。