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參數(shù)資料
| 型號： | FDN302P_NL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | 2400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-3 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 103K |
| 代理商： | FDN302P_NL |
FDN302P Rev C(W)
Typical Characteristics
0
3
6
9
12
15
00.5
1
1.522.5
-VDS, DRAIN-SOURCE VOLTAGE (V)
-I
D
,DRAIN
CURRE
NT
(
A
)
-2.0V
-2.5V
-4.0V
-3.5V
V
GS = -4.5V
-3.0V
0.5
1
1.5
2
2.5
3
0369
12
15
-ID, DRAIN CURRENT (A)
R
DS
(O
N)
,NO
RMALIZE
D
DRAIN-
S
O
URCE
O
N
-R
E
S
IS
T
ANC
E
VGS = -2.0V
-4.0V
-2.5V
-4.5V
-3.0V
-3.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (
oC)
R
DS
(O
N)
,NO
RMALIZE
D
DRAIN-
S
O
URCE
O
N
-R
E
S
IS
T
ANC
E
ID = -2.4A
VGS = -4.5V
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
1.522.5
3
3.5
44.5
5
-VGS, GATE TO SOURCE VOLTAGE (V)
R
DS
(O
N)
,O
N
-R
E
S
IS
T
ANCE
(
O
HM)
I
D = -1.2 A
T
A = 125
oC
TA = 25
oC
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
2
4
6
8
10
12
0.511.522.5
3
-VGS, GATE TO SOURCE VOLTAGE (V)
-I
D
,DRAIN
CURRE
NT
(
A
)
TA = 125
oC
25
oC
V
DS = - 5V
-55
oC
0.0001
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-I
S
,R
EVER
SE
DRAIN
CURRE
NT
(
A
)
TA = 125
oC
25
oC
-55
oC
V
GS = 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
DN30
2
P
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