參數(shù)資料
型號(hào)： FDN302
廠商： Fairchild Semiconductor Corporation
英文描述： P-Channel 2.5V Specified PowerTrench MOSFET
中文描述： P溝道MOSFET的為2.5V指定的PowerTrench
文件頁(yè)數(shù)： 2/5頁(yè)
文件大小： 103K
代理商： FDN302
FDN302P Rev C(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
===
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V, I
D
= –250
μ
A
I
D
= –250
μ
A, Referenced to 25
°
C
–20
V
Breakdown Voltage Temperature
–12
mV/
°
C
V
DS
= –16 V,
V
GS
= 12 V,
V
GS
= –12 V
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
–1
100
–100
μ
A
nA
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
===
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
, I
D
= –250
μ
A
I
D
= –250
μ
A, Referenced to 25
°
C
–0.6
–1.0
3
–1.5
V
Gate Threshold Voltage
mV/
°
C
V
GS
= –4.5 V,
V
GS
= –2.5 V,
V
GS
= –4.5 V, I
D
= –2.4A, T
J
=125
°
C
V
GS
= –4.5 V,
V
DS
= –5 V
V
DS
= –5 V,
I
D
= –2.4 A
I
D
= –2.4 A
I
D
= –2 A
44
64
58
55
80
84
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
–10
A
S
10
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
882
211
112
pF
pF
pF
V
DS
= –10 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
13
11
25
15
9
2
3
23
20
40
27
14
ns
ns
ns
ns
nC
nC
nC
V
DD
= –10 V,
V
GS
= –4.5 V,
I
D
= –1 A,
R
GEN
= 6
V
DS
= –10 V,
V
GS
= –4.5 V
I
D
= –2.4 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
–0.42
–1.2
A
V
V
GS
= 0 V,
I
S
= –0.42
(Note 2)
–0.7
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 250
°
C/W when mounted on a
0.02 in
2
pad of 2 oz. copper.
b) 270°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
≤
=
300
μ
s, Duty Cycle
≤
=
2.0%
F
相關(guān)PDF資料
PDF描述
FDN302P CAP CER 2.2UF 16V 10% X5R 1206
FDN304PZ P-Channel 1.8V Specified PowerTrench MOSFET
FDN304P P-Channel 1.8V Specified PowerTrench MOSFET
FDN306P P-Channel 1.8V Specified PowerTrench MOSFET
FDN308P P-Channel 2.5V Specified PowerTrench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDN302P 功能描述:MOSFET SSOT-3 P-CH 2.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDN302P 制造商:Fairchild Semiconductor Corporation 功能描述:SSOT-3 PCH 20V :ROHS COMPLIANT
FDN302P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDN302P_Q 功能描述:MOSFET SSOT-3 P-CH 2.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDN304P 功能描述:MOSFET SSOT-3 P-CH 1.8V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*