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參數(shù)資料
| 型號： | FDMW2512NZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | 7200 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | 2 X 5 MM, 0.80 MM HEIGHT, MicroFET, MLP-6 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 139K |
| 代理商： | FDMW2512NZ |
FDMW2512NZ Rev D
Typical Characteristics
0
5
10
15
20
25
30
35
40
45
50
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
2.5V
2.0V
V
GS
= 4.5V
3.0V
3.5V
1.8V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0
5
10
I
D
, DRAIN CURRENT (A)
15
20
25
30
R
D
,
D
V
GS
= 1.8V
2.5V
4.5V
3.1V
2.0V
4.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= 7.2A
V
GS
= 4.5V
0.01
0.018
0.026
0.034
0.042
0.05
0.058
0.066
0.074
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= 3.6A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
5
10
15
20
25
30
0.5
1
1.5
2
2.5
3
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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