參數(shù)資料
型號: FDMS8660S
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench SyncFET (30V, 40A, 2.4mOHM)
中文描述: 25 A, 30 V, 0.0039 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, MLP5X6, 8 PIN
文件頁數(shù): 6/8頁
文件大?。?/td> 391K
代理商: FDMS8660S
F
S
T
FDMS8660S Rev.C (W)
www.fairchildsemi.com
6
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MoSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverses recovery
characteristic of the FDMS8660S.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
Typical Characteristics
(continued)
TIME : 12.5 nS/Div
C
U
Figure 14. FDMS8660S SyncFET body
diode reverse recovery characteristic
0
5
10
15
20
25
30
1E-5
1E-4
1E-3
0.01
0.1
T
J
= 100
o
C
T
J
= 125
o
C
I
D
,
V
DS
, REVERSE VOLTAGE (V)
T
J
= 25
o
C
Figure 15. SyncFET body diode reverses
leakage versus drain-source voltage
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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