參數(shù)資料
型號(hào): FDMS8660S
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench SyncFET (30V, 40A, 2.4mOHM)
中文描述: 25 A, 30 V, 0.0039 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, MLP5X6, 8 PIN
文件頁數(shù): 4/8頁
文件大小: 391K
代理商: FDMS8660S
F
S
T
FDMS8660S Rev.C (W)
www.fairchildsemi.com
4
Figure 7.
0
10
20
30
40
50
60
70
80
90
0
2
4
6
8
10
I
D
= 25A
V
DS
= 20V
V
DS
= 10V
V
G
,
Q
g
, GATE CHARGE(nC)
V
DS
= 15V
Gate Charge Characteristics
Figure 8.
0.1
1
10
100
10
2
10
3
10
4
f = 1MHz
V
GS
= 0V
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
Capacitance vs Drain
to Source Voltage
Figure 9.
0.1
1
10
100
1000
1
10
3000
T
J
= 25
o
C
t
AV
, TIME IN AVALANCHE(ms)
I
A
,
30
Unclamped Inductive
Switching Capability
Figure 10.
Current vs Case Temperature
25
50
75
100
125
150
10
20
30
40
50
60
70
80
Limited by Package
R
θ
JC
= 1.5
o
C/W
V
GS
= 4.5V
V
GS
= 10V
I
D
,
T
C
, CASE TEMPERATURE
(
o
C
)
Maximum Continuous Drain
Figure 11. Forward Bias Safe
Operating Area
0.01
0.1
1
10
100
0.01
0.1
1
10
100
1000
10s
1ms
10ms
100ms
1s
DC
D
,
V
DS
, DRAIN to SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
T
A
= 25
O
C
Figure 12.
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
0.1
1
10
100
1000
V
GS
= 10V
SINGLE PULSE
P
(
P
)
,
t, PULSE WIDTH (s)
3000
T
A
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
150
-----------------------
T
A
Single Pulse Maximum
Power Dissipation
Typical Characteristics
T
J
= 25°C unless otherwise noted
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