- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄375777 > FDMF8704 (FAIRCHILD SEMICONDUCTOR CORP) High Current / High Frequency FET plus Driver Multi-chip Module PDF資料下載
參數(shù)資料
| 型號(hào)： | FDMF8704 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | MOSFETs |
| 英文描述： | High Current / High Frequency FET plus Driver Multi-chip Module |
| 中文描述： | 32 A HALF BRDG BASED MOSFET DRIVER, QCC56 |
| 封裝： | 8 X 8 MM, ROHS COMPLIANT, MO-220WLLD-5, MLP-56 |
| 文件頁(yè)數(shù)： | 3/11頁(yè) |
| 文件大?。?/td> | 428K |
| 代理商： | FDMF8704 |
3
www.fairchildsemi.com
FDMF8704 Rev. F2
F
Absolute Maximum Rating
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the
recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to
stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings
only.
Note 1:
Package power dissipation based on 4 layers, 2 square inch, 2 oz. copper pad. R
θ
JPCB
is the steady state junction to PCB
thermal resistance with PCB temperature referenced at VSWH pin.
Recommended Operating Range
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating condi-
tions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or
designing to Absolute Maximum Ratings.
Electrical Characteristics
V
IN
= 12V, V
CIN
= 5V, T
A
= 25°C unless otherwise noted
.
Parameter
Note 2:
t
PDL(LDRV/HRDV)
refers to HIGH-to-LOW transition, t
PDH(LDRV/HDRV)
refers to LOW-to-HIGH transition.
Parameter
Min.
Max.
Units
V
CIN
, PWM, DISB to PGND
V
IN
to PGND
BOOT to VSWH
-0.3
6
V
-0.3
24
V
-0.3
6
V
VSWH to PGND
-1.0
24
V
BOOT to PGND
-0.3
30
V
I
O(AV)
I
O(PK)
R
θ
JPCB
P
D
Operating and Storage Junction Temperature Range
V
IN
= 12V, V
O
= 1.3V, f
sw
= 1MHz, T
PCB
= 100°C
V
IN
= 12V, t
PULSE
= 10μs
Junction to PCB Thermal Resistance (note 1)
32
A
65
A
5
°C/W
T
PCB
= 100°C (note 1)
10
W
-55
150
°C
Parameter
Min.
Typ.
Max.
Units
V
CIN
V
IN
V
OUT
Control Circuit Supply Voltage
4.5
5
5.5
V
Output Stage Supply Voltage
7
12
20
V
Output Voltage
0.8
1.3
3.2
V
Symbol
Conditions
Min.
Typ.
Max.
Units
Operating Voltage Range
V
CIN
4.5
5
5.5
V
Control Circuit Supply Current
I
CC
f
SW
= 0Hz, V
DISB
= 0V
f
SW
= 1MHz, V
DISB
= 5V
1
3
mA
50
PWM Input High Voltage
V
IH(PWM)
V
IL(PWM)
I
IL(PWM)
V
IHDISB)
V
IL(DISB)
I
IL(DISB)
t
PDL(DISB-LDRV)(2)
t
PDH(DISB-LDRV)(2)
t
PDL(LDRV)(2)
t
PDL(HDRV)(2)
t
PDH(LDRV)(2)
t
PDH(HDRV)(2)
2.4
V
PWM Input Low Voltage
0.8
V
PWM Input Current
-2
2
μA
DISB Input High Voltage
2.4
V
DISB Input Low Voltage
0.8
V
DISB Input Current
-2
2
μA
Propagation Delay
V
IN
= 12V, V
OUT
= 1.3V,
f
sw
= 1MHz, I
O
= 30A
8
ns
6
ns
9
ns
22
ns
12
ns
20
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDMF8705 | Driver plus FET Multi-chip Module |
| FDMJ1023PZ | Dual P-Channel PowerTrench㈢ MOSFET |
| FDMS2380 | 740; 38000/740 Series; Microcontroller; Bit Size: 8-bit; ROM: 2K; RAM: 192; ROM Type: QzROM; CPU: 740 core; Minimum Instruction Execution Time (ns): 250 (@8MHz); Operating Frequency / Supply Voltage: 1.8 to 5.5V; Operating Ambient Temperature (°C): -20 to 85; Package Code: PLSP0020JB-A (20P2F-A) |
| FDMS2572_07 | N-Channel UltraFET Trench㈢ MOSFET 150V, 27A, 47mз |
| FDMS2572 | N-Channel UltraFET Trench MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDMF8704V | 功能描述:功率驅(qū)動(dòng)器IC Driver plus FET w/5v reg RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| FDMF8705 | 功能描述:功率驅(qū)動(dòng)器IC MLP 8X8 DRIVER PLUS FET MULTI-CHIP MODU RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| FDMH000C11L-YW | 制造商:Thomas & Betts 功能描述:HAZ3FLD,1000W,M.H.,5 TAP BALST |
| FDMHP17C070-YWE | 制造商:Thomas & Betts 功能描述:HZ FDMHP17C070YWE HAZ3,FLD,175W,M.H |
| FDMJ1023PZ | 功能描述:MOSFET -20V Dual P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。