參數(shù)資料
型號(hào): FDMC8854
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel Power Trench MOSFET 30V, 15A, 5.7mohm
中文描述: 15 A, 30 V, 0.0057 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, POWER 33, 8 PIN
文件頁(yè)數(shù): 4/7頁(yè)
文件大?。?/td> 207K
代理商: FDMC8854
F
M
FDMC8854 Rev.C
www.fairchildsemi.com
4
Figure 7.
0
10
20
30
40
50
0
2
4
6
8
10
V
DD
= 10V
V
DD
=15V
V
G
,
Q
g
, GATE CHARGE(nC)
V
DD
= 5V
I
D
= 15A
Gate Charge Characteristics
Figure 8.
0.1
1
10
100
1000
f = 1MHz
V
GS
= 0V
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
30
4000
Capacitance vs Drain
to Source Voltage
Figure 9.
0.01
0.1
1
10
100
1000
1
10
T
J
= 25
o
C
T
J
= 125
o
C
t
AV
, TIME IN AVALANCHE(ms)
I
A
,
20
Unclamped Inductive
Switching Capability
Figure 10.
Current vs Case Temperature
25
50
T
C
, CASE TEMPERATURE
(
Maximum Continuous Drain
75
100
125
150
0
20
40
60
80
Package limited
R
θ
JC
= 3
o
C/W
V
GS
= 4.5V
V
GS
= 10V
I
D
,
o
C
)
Figure 11. Forward Bias Safe
Operating Area
0.01
0.1
1
10
100
0.01
0.1
1
10
100
100ms
1s
1ms
R
DS(ON)
LIMITED
DC
10ms
SINGLE PULSE
T
J
= MAX RATED
R
θ
JA = 135
o
C/W
T
A
= 25
o
C
I
D
,
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 12.
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
1
10
100
0.5
V
GS
= 10V
SINGLE PULSE
P
(
P
)
,
t, PULSE WIDTH (s)
Single Pulse Maximum
Power Dissipation
200
T
A
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
150
----------------------
T
A
Typical Characteristics
T
J
= 25°C unless otherwise noted
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