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參數(shù)資料
| 型號： | FDMC8854 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Power Trench MOSFET 30V, 15A, 5.7mohm |
| 中文描述： | 15 A, 30 V, 0.0057 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, POWER 33, 8 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 207K |
| 代理商： | FDMC8854 |
F
M
FDMC8854 Rev.C
www.fairchildsemi.com
2
Notes:
1:
R
is determined with the device mounted on a 1in
2
pad 2 oz copper pad on a 1.5
x 1.5 in. board of FR-4 material. R
θ
JC
is guaranteed by design while
R
θ
CA
is determined by
the user's board design.
2:
Pulse Test: Pulse Width < 30
0
μ
s, Duty cycle < 2.0%.
a. 60°C/W when mounted on
a 1 in
pad of 2 oz copper
b. 135°C/W when mounted on a
minimum pad of 2 oz copper
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
On Characteristics
(Note 2)
V
GS(th)
Gate to Source Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
g
Gate Resistance
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
Q
g(TOT)
Total Gate Charge
Q
gs
Gate to Source Gate Charge
Q
gd
Gate to Drain “Miller” Charge
Drain-Source Diode Characteristics
V
SD
Source to Drain Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250
μ
A, V
GS
= 0V
30
V
I
D
= 250
μ
A, referenced to 25°C
21
mV/°
C
V
DS
= 24V, V
GS
= 0V
V
GS
= ±20V, V
GS
= 0V
1
μ
A
nA
±100
V
GS
= V
DS
, I
D
= 250
μ
A
1
1.9
3
V
Gate to Source Threshold Voltage
I
D
= 250
μ
A, referenced to 25°C
-6
mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= 10V, I
D
= 15A
V
GS
= 4.5V, I
D
= 13A
V
GS
= 10V, I
D
= 15A, T
J
= 125°C
V
DS
= 5V, I
D
= 15A
4.4
5.6
6.6
60
5.7
7.6
9.0
m
g
FS
Forward Transconductance
S
V
DS
= 10V, V
GS
= 0V,
f = 1MHz
2560
515
290
1.3
3405
685
435
pF
pF
pF
f = 1MHz
V
DD
= 10V, I
D
= 15A
V
GS
= 10V, R
GEN
= 6
13
5
31
5
41
7
7
23
10
50
10
57
ns
ns
ns
ns
nC
nC
nC
V
DD
=10V, I
D
= 15A,
V
GS
= 10V
V
GS
= 0V, I
S
= 15A (Note 2)
0.8
33
28
1.3
50
42
V
ns
nC
I
F
= 15A, di/dt = 100A/
μ
s
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