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參數(shù)資料
| 型號(hào)： | FDMA420NZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Single N-Channel 2.5V Specified PowerTrench MOSFET 20V, 5.7A, 30m Ohm |
| 中文描述： | 5.7 A, 20 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 2 X 2 MM, ROHS COMPLIANT, MO-229, MICROFET-6 |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 295K |
| 代理商： | FDMA420NZ |
F
FDMA420NZ Rev B
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
B
VDSS
T
J
I
DSS
I
GSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage
V
GS
= 0V , I
D
= 250
μ
A
I
D
= 250
μ
A,
Referenced to 25°C
V
DS
= 16V, V
GS
= 0V,
V
GS
=
±
12V, V
DS
= 0V
20
V
12
mV/°C
1
μ
A
μ
A
±
10
On Characteristics
V
GS(th)
V
GS(th)
T
J
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A,
Referenced to 25°C
V
GS
= 4.5V, I
D
= 5.7A
V
GS
= 4.0V, I
D
= 5.7A
V
GS
= 3.1V, I
D
= 5.0A
V
GS
= 2.5V, I
D
= 5.0A
V
GS
= 4.5V, I
D
= 5.7A,
T
J
=150°C
V
DS
= 5V, I
D
= 5.7A
0.6
0.83
1.5
V
-3.1
mV/°C
R
DS(ON)
Static Drain-Source On-Resistance
16.8
17.3
18.9
33
21.2
40
30
31
m
24.8
44
g
FS
Forward Transconductance
28.3
S
(Note 2)
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
701
163
125
1.92
935
220
190
pF
pF
pF
Switching Characteristics
(Note 2)
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 10V, I
D
= 1A
V
GS
= 4.5V, R
GEN
= 6
9.8
8.6
21.5
8.6
8.8
0.9
2.4
20
18
43
18
12
2
4
ns
ns
ns
ns
nC
nC
nC
V
DS
= 10V, I
D
= 5.7A,
V
GS
= 4.5V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
2.0
1.2
20
5
A
V
ns
nC
V
GS
= 0V, I
S
= 2.0A
I
F
= 5.7A,
di/dt = 100A/
μ
s
0.69
Notes:
1.
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins.
a.
145°C/W when mounted on a minimum pad of 2 oz copper.
b.
52°C/W when mounted on a 1 in
pad of 2 oz copper.
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%.
3.
The diode connected between the gate and the source serves only as proection against ESD. No gate overvoltage rating is implied.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDMA420NZ_0609 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Single N-Channel 2.5V Specified PowerTrench MOSFET 20V, 5.7A, 30mз |
| FDMA420NZ_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Single N-Channel 2.5V Specified PowerTrench㈢ MOSFET 20V, 5.7A, 30mヘ |
| FDMA430NZ | 功能描述:MOSFET 2.5V SINGLE NCH SPECIFIED POWER RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMA430NZ | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDMA430NZ_0609 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Single N-Channel 2.5V Specified PowerTrench㈢ MOSFET 30V, 5.0A, 40mз |
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