參數(shù)資料
型號(hào)： FDMA1032CZ
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： 20V Complementary PowerTrench MOSFET
中文描述： 3700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-229
封裝： 2 X 2 MM, HALOGEN FREE AND ROHS COMPLIANT, MICROFET-6
文件頁數(shù)： 3/9頁
文件大?。?/td> 170K
代理商： FDMA1032CZ
FDMA1032CZ Rev B (W)
Electrical Characteristics
Symbol
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Type
Min
Typ
Max
Units
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
8
13
8
11
14
37
3
36
4
7
0.7
1.1
1.1
2.4
16
24
16
20
26
59
6
58
6
10
ns
ns
ns
ns
nC
nC
nC
Q1
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
Q2
V
DD
= –10 V, I
D
= –1 A,
V
GS
= –4.5 V, R
GEN
= 6
Q1
V
DS
= 10 V, I
D
= 3.7 A, V
GS
= 4.5 V
Q2
V
DS
= –10 V,I
D
=– 3.1 A,
V
GS
=– 4.5 V
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
1.1
–1.1
1.2
–1.2
A
V
ns
V
SD
Drain-Source Diode Forward
Voltage
Diode Reverse Recovery
Time
Diode Reverse Recovery
Charge
V
GS
= 0 V, I
S
= 1.1 A
V
GS
= 0 V, I
S
= –1.1 A
Q1
I
F
= 3.7 A, dI
F
/dt = 100 A/μs
Q2
I
F
= –3.1 A, dI
F
/dt = 100 A/μs
(Note 2)
(Note 2)
0.7
–0.8
11
25
2
9
t
rr
Q
rr
nC
Notes:
1.
R
θ
JA
is determined with the device mounted on a 1 in
2
pad of 2 oz. copper on a 1.5 x 1.5 in. board of FR-4 material. R
θ
JC
is guaranteed by design while R
θ
JA
is
determined by the user's board design.
(a)
R
θ
JA
= 86°C/W when mounted on a 1in
2
pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB
(b)
R
θ
JA
= 173°C/W when mounted on a minimum pad of 2 oz copper
(c)
R
θ
JA
= 69°C/W when mounted on a 1in
2
pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB
(d)
R
θ
JA
= 151°C/W when mounted on a minimum pad of 2 oz copper
a) 86
o
C/W when
mounted on a
1in
pad of
2 oz copper
b) 173
o
C/W when
mounted on a
minimum pad of
2 oz copper
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDMA1032CZ 制造商:Fairchild Semiconductor Corporation 功能描述:DUAL N/P CH MOSFET 20V MICROFET 制造商:Fairchild Semiconductor Corporation 功能描述:DUAL N/P CH MOSFET, 20V, MICROFET
FDMA1032CZ_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:20V Complementary PowerTrench㈢ MOSFE
FDMA1430JP 功能描述:MOSFET P-Chan -30V -2.9A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMA2002NZ 功能描述:MOSFET 30V Dual N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMA2002NZ_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel PowerTrench㈢ MOSFET
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